XP162A12A6PR-G MOSFET Transistor

The XP162A12A6PR-G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the XP162A12A6PR-G transistor as follows.

XP162A12A6PR-G Transistor Specification

Transistor Code		XP162A12A6PR-G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-89
Transistor SMD Code		212*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS

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