XP161A1355PR-G MOSFET Transistor

The XP161A1355PR-G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the XP161A1355PR-G transistor as follows.

XP161A1355PR-G Transistor Specification

Transistor Code		XP161A1355PR-G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-89
Transistor SMD Code		113*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		210pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		1.2V

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