WVM9.5N100 MOSFET Transistor

The WVM9.5N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WVM9.5N100 transistor as follows.

WVM9.5N100 Transistor Specification

Transistor Code		WVM9.5N100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	230W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V

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