WVM55N10 MOSFET Transistor

The WVM55N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WVM55N10 transistor as follows.

WVM55N10 Transistor Specification

Transistor Code		WVM55N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	250W
Operating Junction Temperature (Maximum)		150°C
Rise Time		350*nS
Gate-Threshold Voltage (Maximum)		4.5V

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