WVM4N50 MOSFET Transistor

The WVM4N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WVM4N50 transistor as follows.

WVM4N50 Transistor Specification

Transistor Code		WVM4N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	75W
Operating Junction Temperature (Maximum)		150°C
Rise Time		180*nS
Gate-Threshold Voltage (Maximum)		4V

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