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WVM40N20 MOSFET Transistor

The WVM40N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WVM40N20 transistor as follows.

Circuit diagram symbol of the WVM40N20 transistor

WVM40N20 Transistor Specification

Transistor Code WVM40N20
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 40A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.08Ohm
Power Dissipation (Maximum) PD 250W
Operating Junction Temperature (Maximum) 150°C
Rise Time 300*nS
Gate-Threshold Voltage (Maximum) 4.5V

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