WVM3N10 MOSFET Transistor

The WVM3N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WVM3N10 transistor as follows.

WVM3N10 Transistor Specification

Transistor Code		WVM3N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	25W
Operating Junction Temperature (Maximum)		150°C
Rise Time		75*nS
Gate-Threshold Voltage (Maximum)		4V

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