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WPM3012 MOSFET Transistor

The WPM3012 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WPM3012 transistor as follows.

Circuit diagram symbol of the WPM3012 transistor

WPM3012 Transistor Specification

Transistor Code WPM3012
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Transistor SMD Code W32*
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.068Ohm
Power Dissipation (Maximum) PD 0.8W
Drain-Source Capacitance 67pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 1.55nC

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