WPM2009D MOSFET Transistor

The WPM2009D is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WPM2009D transistor as follows.

WPM2009D Transistor Specification

Transistor Code		WPM2009D
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN3X3-8L
Transistor SMD Code		WPM2009
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.059Ohm
Power Dissipation (Maximum)	PD	1W

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