WPM2006 MOSFET Transistor

The WPM2006 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WPM2006 transistor as follows.

WPM2006 Transistor Specification

Transistor Code		WPM2006
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2X2-6L
Transistor SMD Code		WLSIJ
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	1.45W

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