WNM2025 MOSFET Transistor

The WNM2025 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WNM2025 transistor as follows.

WNM2025 Transistor Specification

Transistor Code		WNM2025
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Transistor SMD Code		W25
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.036Ohm
Power Dissipation (Maximum)	PD	0.7W
Drain-Source Capacitance		125pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11.5nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		12.1nC

UXPython is not the creator or an official representative of the WNM2025 MOSFET transistor. You can download the official WNM2025 MOSFET transistor datasheet to get more infromation about this transistor.

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