WNM2016 MOSFET Transistor

The WNM2016 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WNM2016 transistor as follows.

WNM2016 Transistor Specification

Transistor Code		WNM2016
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Transistor SMD Code		WT6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.047Ohm
Power Dissipation (Maximum)	PD	0.5W
Drain-Source Capacitance		62pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20.8nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		8.5nC

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