WFW40N25W MOSFET Transistor

The WFW40N25W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFW40N25W transistor as follows.

WFW40N25W Transistor Specification

Transistor Code		WFW40N25W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.068Ohm
Power Dissipation (Maximum)	PD	260W
Drain-Source Capacitance		685pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		620nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		87nC

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