WFW24N50N MOSFET Transistor

The WFW24N50N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFW24N50N transistor as follows.

WFW24N50N Transistor Specification

Transistor Code		WFW24N50N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PN
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	290W
Drain-Source Capacitance		520pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		90nC

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