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WFW24N50N MOSFET Transistor

The WFW24N50N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFW24N50N transistor as follows.

Circuit diagram symbol of the WFW24N50N transistor

WFW24N50N Transistor Specification

Transistor Code WFW24N50N
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3PN
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 24A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.19Ohm
Power Dissipation (Maximum) PD 290W
Drain-Source Capacitance 520pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 250nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 90nC

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