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WFW18N50W MOSFET Transistor

The WFW18N50W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFW18N50W transistor as follows.

Circuit diagram symbol of the WFW18N50W transistor

WFW18N50W Transistor Specification

Transistor Code WFW18N50W
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.27Ohm
Power Dissipation (Maximum) PD 280W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 42nC

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