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WFU20N06 MOSFET Transistor

The WFU20N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFU20N06 transistor as follows.

Circuit diagram symbol of the WFU20N06 transistor

WFU20N06 Transistor Specification

Transistor Code WFU20N06
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.039Ohm
Power Dissipation (Maximum) PD 36W
Drain-Source Capacitance 68pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12.6nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 7.6nC

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