WFP8N60B MOSFET Transistor

The WFP8N60B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFP8N60B transistor as follows.

WFP8N60B Transistor Specification

Transistor Code		WFP8N60B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	142W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		28nC

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