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WFP8N60 MOSFET Transistor

The WFP8N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFP8N60 transistor as follows.

Circuit diagram symbol of the WFP8N60 transistor

WFP8N60 Transistor Specification

Transistor Code WFP8N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 145W
Drain-Source Capacitance 115pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 80nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 28nC

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