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WFP830B MOSFET Transistor

The WFP830B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFP830B transistor as follows.

Circuit diagram symbol of the WFP830B transistor

WFP830B Transistor Specification

Transistor Code WFP830B
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.6Ohm
Power Dissipation (Maximum) PD 73W
Drain-Source Capacitance 80pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 46nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 18nC

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