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WFP640 MOSFET Transistor

The WFP640 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFP640 transistor as follows.

Circuit diagram symbol of the WFP640 transistor

WFP640 Transistor Specification

Transistor Code WFP640
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.18Ohm
Power Dissipation (Maximum) PD 140W
Drain-Source Capacitance 245pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 54nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 45nC

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