WFP10N65 MOSFET Transistor

The WFP10N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFP10N65 transistor as follows.

WFP10N65 Transistor Specification

Transistor Code		WFP10N65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.95Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		117pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		46nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		43nC

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