VTI640 MOSFET Transistor

The VTI640 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the VTI640 transistor as follows.

VTI640 Transistor Specification

Transistor Code		VTI640
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C

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