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VTI634F MOSFET Transistor

The VTI634F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the VTI634F transistor as follows.

Circuit diagram symbol of the VTI634F transistor

VTI634F Transistor Specification

Transistor Code VTI634F
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 8.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.45Ohm
Power Dissipation (Maximum) PD 30W
Operating Junction Temperature (Maximum) 150°C

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