VTI630F MOSFET Transistor

The VTI630F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the VTI630F transistor as follows.

VTI630F Transistor Specification

Transistor Code		VTI630F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	38W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C

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