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VT6J1 MOSFET Transistor

The VT6J1 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the VT6J1 transistor as follows.

Circuit diagram symbol of the VT6J1 transistor

VT6J1 Transistor Specification

Transistor Code VT6J1
Transistor Type MOSFET
Control Channel Type P-Channel
Package VMT6
Transistor SMD Code J01
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 0.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.8Ohm
Power Dissipation (Maximum) PD 0.15W
Drain-Source Capacitance 4pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 62nS
Gate-Threshold Voltage (Maximum) 1V

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