VS-FB190SA10 MOSFET Transistor

The VS-FB190SA10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the VS-FB190SA10 transistor as follows.

VS-FB190SA10 Transistor Specification

Transistor Code		VS-FB190SA10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-227
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	190A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	568W
Drain-Source Capacitance		2800pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		351nS
Gate-Threshold Voltage (Maximum)		4.35V
Total Gate Charge		250nC

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