VP0106 MOSFET Transistor

The VP0106 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the VP0106 transistor as follows.

VP0106 Transistor Specification

Transistor Code		VP0106
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		22pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3nS
Gate-Threshold Voltage (Maximum)		3.5V

UXPython is not the creator or an official representative of the VP0106 MOSFET transistor. You can download the official VP0106 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

PJN1NA50 MOSFET Transistor RJK4002DJE MOSFET Transistor ZVNL110ASTZ MOSFET Transistor VN0106N3 MOSFET Transistor BST70A MOSFET Transistor STQ2LN60K3-AP MOSFET Transistor ZVN0124ASTOA MOSFET Transistor 1N65A MOSFET Transistor ZVN4306AVSTOA MOSFET Transistor P1087 MOSFET Transistor J271 MOSFET Transistor VN2410L MOSFET Transistor PN4117A MOSFET Transistor TIS75 MOSFET Transistor J308 MOSFET Transistor FJN598J MOSFET Transistor VP0109 MOSFET Transistor MPF6661 MOSFET Transistor 2N5638 MOSFET Transistor BST100 MOSFET Transistor