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VNT008D MOSFET Transistor

The VNT008D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the VNT008D transistor as follows.

Circuit diagram symbol of the VNT008D transistor

VNT008D Transistor Specification

Transistor Code VNT008D
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.77A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 150pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 65nC

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