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VN10KCSM4 MOSFET Transistor

The VN10KCSM4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the VN10KCSM4 transistor as follows.

Circuit diagram symbol of the VN10KCSM4 transistor

VN10KCSM4 Transistor Specification

Transistor Code VN10KCSM4
Transistor Type MOSFET
Control Channel Type N-Channel
Package LCC3
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 0.17A
Drain-Source On-State Resistance (Maximum) RDS(on) 5Ohm
Power Dissipation (Maximum) PD 0.3W
Drain-Source Capacitance 16pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7*nS
Gate-Threshold Voltage (Maximum) 2.5V

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