VN10K-TO18 MOSFET Transistor

The VN10K-TO18 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the VN10K-TO18 transistor as follows.

VN10K-TO18 Transistor Specification

Transistor Code		VN10K-TO18
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-18
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	0.17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5Ohm
Power Dissipation (Maximum)	PD	0.312W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10*nS
Gate-Threshold Voltage (Maximum)		2.5V

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