The VN0109ND is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the VN0109ND transistor as follows.
| Transistor Code | VN0109ND | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | DICE | |
| Drain-Source Voltage (Maximum) | VDS | 90V |
| Drain Current (Maximum) | ID | 2A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 3Ohm |
| Power Dissipation (Maximum) | PD | 1W |
| Drain-Source Capacitance | 20pF | |
| Rise Time | 5nS | |
| Gate-Threshold Voltage (Maximum) | 2.4V | |
UXPython is not the creator or an official representative of the VN0109ND MOSFET transistor. You can download the official VN0109ND MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
VN0104ND MOSFET Transistor
VN0106ND MOSFET Transistor
VN0335ND MOSFET Transistor
VN0360ND MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.