VN0106N9 MOSFET Transistor

The VN0106N9 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the VN0106N9 transistor as follows.

VN0106N9 Transistor Specification

Transistor Code		VN0106N9
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-52
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		20pF
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		2.4V

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