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VMO580-02F MOSFET Transistor

The VMO580-02F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the VMO580-02F transistor as follows.

Circuit diagram symbol of the VMO580-02F transistor

VMO580-02F Transistor Specification

Transistor Code VMO580-02F
Transistor Type MOSFET
Control Channel Type N-Channel
Package Y3LI
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 580A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0038Ohm
Power Dissipation (Maximum) PD 1500W
Operating Junction Temperature (Maximum) 150°C
Rise Time 350nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 2750nC

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