UTT6N10Z MOSFET Transistor

The UTT6N10Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UTT6N10Z transistor as follows.

UTT6N10Z Transistor Specification

Transistor Code		UTT6N10Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.108Ohm
Power Dissipation (Maximum)	PD	2.2W
Drain-Source Capacitance		46pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		1.3nS

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