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UTT50N06 MOSFET Transistor

The UTT50N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UTT50N06 transistor as follows.

Circuit diagram symbol of the UTT50N06 transistor

UTT50N06 Transistor Specification

Transistor Code UTT50N06
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252_TO-220
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.016Ohm
Power Dissipation (Maximum) PD 114W
Drain-Source Capacitance 430pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 100nS

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