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UTT20N10 MOSFET Transistor

The UTT20N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UTT20N10 transistor as follows.

Circuit diagram symbol of the UTT20N10 transistor

UTT20N10 Transistor Specification

Transistor Code UTT20N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220_TO-252
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.12Ohm
Power Dissipation (Maximum) PD 62.5W
Drain-Source Capacitance 165pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 150nS

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