UTT200N02 MOSFET Transistor

The UTT200N02 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UTT200N02 transistor as follows.

UTT200N02 Transistor Specification

Transistor Code		UTT200N02
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.002Ohm
Power Dissipation (Maximum)	PD	214W
Drain-Source Capacitance		1220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS

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