UTT18P06 MOSFET Transistor

The UTT18P06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UTT18P06 transistor as follows.

UTT18P06 Transistor Specification

Transistor Code		UTT18P06
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.048Ohm
Power Dissipation (Maximum)	PD	38.5W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		43nS

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