UTT10N10 MOSFET Transistor

The UTT10N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UTT10N10 transistor as follows.

UTT10N10 Transistor Specification

Transistor Code		UTT10N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251_TO-252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.142Ohm
Power Dissipation (Maximum)	PD	54W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55nS

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