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UTD413 MOSFET Transistor

The UTD413 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UTD413 transistor as follows.

Circuit diagram symbol of the UTD413 transistor

UTD413 Transistor Specification

Transistor Code UTD413
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-251_TO-252
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.036Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 143pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 12.2nS

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