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UT3N06 MOSFET Transistor

The UT3N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UT3N06 transistor as follows.

Circuit diagram symbol of the UT3N06 transistor

UT3N06 Transistor Specification

Transistor Code UT3N06
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251_TO-252_SOT-23
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.09Ohm
Power Dissipation (Maximum) PD 1.13W
Drain-Source Capacitance 55pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS

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