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UT2N10 MOSFET Transistor

The UT2N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UT2N10 transistor as follows.

Circuit diagram symbol of the UT2N10 transistor

UT2N10 Transistor Specification

Transistor Code UT2N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252_TO-92_TO-92NL
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.05Ohm
Power Dissipation (Maximum) PD 25W
Drain-Source Capacitance 80pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS

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