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UT100N03-Q MOSFET Transistor

The UT100N03-Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UT100N03-Q transistor as follows.

Circuit diagram symbol of the UT100N03-Q transistor

UT100N03-Q Transistor Specification

Transistor Code UT100N03-Q
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220_TO-263
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.00336Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 680pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 10nS

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