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UF8010 MOSFET Transistor

The UF8010 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UF8010 transistor as follows.

Circuit diagram symbol of the UF8010 transistor

UF8010 Transistor Specification

Transistor Code UF8010
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263_TO-220_TO-220
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.012Ohm
Power Dissipation (Maximum) PD 260W
Drain-Source Capacitance 620pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 370nS

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