TT8U1 MOSFET Transistor

The TT8U1 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TT8U1 transistor as follows.

TT8U1 Transistor Specification

Transistor Code		TT8U1
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSST8
Transistor SMD Code		U01
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.105Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		6.7nC

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