TT8M2 MOSFET Transistor

The TT8M2 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TT8M2 transistor as follows.

TT8M2 Transistor Specification

Transistor Code		TT8M2
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TSST8
Transistor SMD Code		M02
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		3.2nC

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