TT8M1 MOSFET Transistor

The TT8M1 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TT8M1 transistor as follows.

TT8M1 Transistor Specification

Transistor Code		TT8M1
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TSST8
Transistor SMD Code		M01
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.072Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		65pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		3.6nC

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