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TT8J11 MOSFET Transistor

The TT8J11 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TT8J11 transistor as follows.

Circuit diagram symbol of the TT8J11 transistor

TT8J11 Transistor Specification

Transistor Code TT8J11
Transistor Type MOSFET
Control Channel Type P-Channel
Package TSST8
Transistor SMD Code J11
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.043Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 200pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 30nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 22nC

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