TT8J11 MOSFET Transistor

The TT8J11 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TT8J11 transistor as follows.

TT8J11 Transistor Specification

Transistor Code		TT8J11
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSST8
Transistor SMD Code		J11
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.043Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		22nC

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