TSM9NB50CI MOSFET Transistor

The TSM9NB50CI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM9NB50CI transistor as follows.

TSM9NB50CI Transistor Specification

Transistor Code		TSM9NB50CI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ITO-220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		129pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		46.8nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		44nC

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