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TSM9N90CI MOSFET Transistor

The TSM9N90CI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM9N90CI transistor as follows.

Circuit diagram symbol of the TSM9N90CI transistor

TSM9N90CI Transistor Specification

Transistor Code TSM9N90CI
Transistor Type MOSFET
Control Channel Type N-Channel
Package ITO-220
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 48W
Drain-Source Capacitance 184pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 49nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 65nC

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